7. |
Takhee Lee, N.P. Chen, J. Liu, R.P. Andres, D.B. Janes, E.H. Chen, M.R. Melloch, J.M. Woodall, and R. Reifenberger, "Ohmic nano-contact to GaAs with undoped and p-doped low-temperature grown GaAs cap layers", Appl. Phys. Lett. 76, 212 (2000). [PDF] [Journal link]
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6. |
D. B. Janes, Takhee Lee, J. Liu, M. Batistuta, N.P. Chen, B.L. Walsh, R.P. Andres, E.H. Chen, M.R. Melloch, J.M. Woodall, and R. Reifenberger, "Self-assembled metal/molecule/semiconductor nanostructures for electronic device and contact applications", J. Electron. Mater.29, 565 (2000). [PDF] [Journal link]
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5. |
D. B. Janes, R.P. Andres, M. Batistuta, E.H. Chen, N.P. Chen, S. Datta, T. Lee, Jia Liu, M.R. Melloch, R. Reifenberger, and J.M. Woodall, "Interface and contact structures for nanoelectronic devices using asemblies of metalic nanoclusters, conjugated organic molecules and chemically stable semiconductor layers", Superlattices and Microstructures 27, 555 (2000). [PDF] [Journal link]
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4. |
Takhee Lee, J. Liu, N.P. Chen, R.P. Andres, D.B. Janes, and R. Reifenberger, Electronic properties of metallic nanoclusters on semiconductor surfaces: Implication for nanoelectronic device application, J. Nanoparticle Research, 2, 345-362 (2000). [PDF] [Journal link]
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3. |
Takhee Lee, J. Liu, D.B. Janes, V.R. Kolagunta, J. Dicke, R.P. Andres, J. Lauterbach, M.R. Melloch, D. McInturff, J.M. Woodall, and R. Reifenberger, "An ohmic nano-contact to GaAs", Appl. Phys. Lett. 74, 2869 (1999). [PDF] [Journal link]
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2. |
D.B. Janes, V.R. Kolagunta, M. Batistuta, B.L. Walsh, R.P. Andres, Jia Liu, J. Dicke, J. Lauterbach, T. Pletcher, E.H. Chen, M.R. Melloch, E.L. Peckham, H.J. Ueng, J.M. Woodall T. Lee, R. Reifenberger, C.P. Kubiak, and B. Kasibhatla "Nanoelectronic device applications of a chemically stable GaAs structure", J. Vac. Sci. Technol. B 17, 1773 (1999). [PDF] [Journal link]
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1. |
Takhee Lee, et al, "Investigation of deep levels in InGaP grown by liquid phase epitaxy", J. Kor. Phys. Soc. 27, 550.(1994). [PDF] [Journal link]
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